Physics-Based Compact I–V Model for δ-Doped β-(AlxGa1−x)₂O₃/Ga₂O₃ HFET Involving Parallel Conduction
In: IEEE Transactions on Electron Devices, Jg. 70 (2023-10-01), Heft 10, S. 5242-5248
Online
academicJournal
Zugriff:
Titel: |
Physics-Based Compact I–V Model for δ-Doped β-(AlxGa1−x)₂O₃/Ga₂O₃ HFET Involving Parallel Conduction
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Autor/in / Beteiligte Person: | Patnaik, A. ; Jaiswal, N.K. ; Sharma, P. |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 70 (2023-10-01), Heft 10, S. 5242-5248 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) ; 1557-9646 (print) |
DOI: | 10.1109/TED.2023.3309615 |
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