Epitaxial growth of (AlxGa1−x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition
In: AIP Advances, Jg. 11 (2021), Heft 3, S. 035319-035319-7
Online
academicJournal
Zugriff:
(AlxGa1−x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1−x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1−x)2O3.
| Titel: |
Epitaxial growth of (AlxGa1−x)2O3 thin films on sapphire substrates by plasma assisted pulsed laser deposition
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| Autor/in / Beteiligte Person: | Chen, Zewei ; Arita, Makoto ; Saito, Katsuhiko ; Tanaka, Tooru ; Guo, Qixin |
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| Zeitschrift: | AIP Advances, Jg. 11 (2021), Heft 3, S. 035319-035319-7 |
| Veröffentlichung: | AIP Publishing LLC, 2021 |
| Medientyp: | academicJournal |
| ISSN: | 2158-3226 (print) |
| DOI: | 10.1063/5.0046237 |
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