A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT
In: Nanomaterials, Jg. 13 (2023-10-01), Heft 20, S. 2752
Online
academicJournal
Zugriff:
In this paper, we present a 6-bit phase shifter designed and fabricated using the 150 nm GaN HEMT process. The designed phase shifter operates within the n260 (37~40 GHz) band, as specified in the 5G NR standard, and employs the structure of a switched-filter phase shifter. By serially connecting six single-bit phase shifters, ranging from 180° to 5.625°, the designed phase shifter achieves a phase range of 360°. The fabricated phase shifter exhibits a minimum insertion loss of 5 dB and an RMS phase error of less than 5.36° within the 37 to 40 GHz. This phase shifter is intended for seamless integration with high-power RF circuits.
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A 37–40 GHz 6-Bits Switched-Filter Phase Shifter Using 150 nm GaN HEMT
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| Autor/in / Beteiligte Person: | Song, Jae-Hyeok ; Lee, Eun-Gyu ; Lee, Jae-Eun ; Son, Jeong-Taek ; Kim, Joon-Hyung ; Baek, Min-Seok ; Kim, Choul-Young |
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| Zeitschrift: | Nanomaterials, Jg. 13 (2023-10-01), Heft 20, S. 2752 |
| Veröffentlichung: | MDPI AG, 2023 |
| Medientyp: | academicJournal |
| ISSN: | 2079-4991 (print) |
| DOI: | 10.3390/nano13202752 |
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