The electronic and optical properties of (AlAs)M(Alx Ga1-xAs)N (111) and (110) superlattices ; Elektroninės ir optinės (AlAs)M(AlxGa1-xAs)N (111) ir (110) supergardelių savybės
In: Lithuanian journal of physics, 2002, Vol. 42, no. 3, p. 179-183 ; ISSN 1392-1932, 2002, S. 179-183
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Zugriff:
Electronic state in the conduction band of (111)-and (110)-oriented (AlAs)M(Alx Ga1-xAs)N superlattices (SLs) with different M and N are considered. The properties of such SLs for (111)-oriented structures are mainly governed by the X-valley electrons in AlAs and the X- and L-valley electrons in solid solutions. There are two types of states associated with three valles Г1, X1z, X3z or associated with four valleys X1x, X3x, X1y, X3y for (110)-oriented structures. The calculations are carried out using a previously developed model for envelope function matching at heterointerfaces. Miniband spectra, symmetries, and localizations of the wave functions, as well as the probabilities of interminiband infrared absorption, are calculated and analysed. It is shown that the absorption probabilities may be high not only for a light wave polarized along the SL axis, but also for a linght wave incidend normally to the surface of the structure. It is found that, for analysis of infrared absorption, it is important to take into account the contribution to the wave functions from X5 valence-band states. The superlattices studied are shown to be promising materials for IR photodetectors.
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The electronic and optical properties of (AlAs)M(Alx Ga1-xAs)N (111) and (110) superlattices ; Elektroninės ir optinės (AlAs)M(AlxGa1-xAs)N (111) ir (110) supergardelių savybės
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Autor/in / Beteiligte Person: | Karavaev, G.F ; Chernyshov, V.N ; Egunov, R.M |
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Zeitschrift: | Lithuanian journal of physics, 2002, Vol. 42, no. 3, p. 179-183 ; ISSN 1392-1932, 2002, S. 179-183 |
Veröffentlichung: | 2002 |
Medientyp: | academicJournal |
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