Method of molecular beam epitaxial growth

PURPOSE:To form a single crystal thin film in the accuracy of several hundred Angstrom or below by a method wherein the organic metal compound with which a compound semiconductor is constituted is supplied to the surface of a substrate located in a molecular flow region in the state of gas and, at the same time, an electron beam is made to irradiate locally on the substrate surface. CONSTITUTION:Trimethylgallium (TMG), trimethylaluminum (TMAl) and trimethylarsenic (TMAs) are introduced into a chamber, an ultrafine wire 11 consisting of single crystal of aluminumgallium arsenide of 100Angstrom in width and 100Angstrom in interval is formed on the surface of a substrate 6 by locally projecting an electron beam, and after the introduction of trimethylaluminum gas has been stopped, the scanning pattern of the electron beam is inverted, and a gallium arsenide (GaAs) ultrafine wire 12 is filled between a GaAlAs ultrafine wire 1 Then, the scanning pattern of the electron beam is returned to its original state under the condition wherein TMG and TMAs gas are introduced, and a GaAs ultrafine wire 13 is laminated on the GaAlAs ultrafine wire 1