Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor
In: CrystEngComm, Jg. 25 (2023), Heft 8, S. 1263-1269
Online
academicJournal
Zugriff:
A horizontal warm-wall MOCVD reactor with a Mo reflector screen stabilizes the temperature field and facilitates TMG decomposition.
Titel: |
Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor
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Autor/in / Beteiligte Person: | Niu, Huidan ; Yao, Weizhen ; Yang, Shaoyan ; Liu, Xianglin ; Chen, Qingqing ; Wang, Lianshan ; Wang, Huanhua ; Wang, Zhanguo ; National Natural Science Foundation of China ; Institute of Semiconductors, Chinese Academy of Sciences |
Link: | |
Zeitschrift: | CrystEngComm, Jg. 25 (2023), Heft 8, S. 1263-1269 |
Veröffentlichung: | Royal Society of Chemistry (RSC), 2023 |
Medientyp: | academicJournal |
ISSN: | 1466-8033 |
DOI: | 10.1039/d2ce01678h |
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