Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH 3 ) 3 · N(CH 3 ) 3 ‐adduct as precursor
In: Crystal Research and Technology, Jg. 24 (1989), Heft 1, S. 29-33
academicJournal
Zugriff:
Epitaxial layers of GaAs have been grown by MOVPE using trimethylgallium‐trimethylamin‐adduct (TMGa‐TMN) as the Ga‐precursor. In comparison to the growth system using pure TMGa no significant influence on growth conditions and materials parameters could be found. The deposited GaAs is of fairly high quality with room temperature mobilities of 6700 cm 2 /Vs at free electron concentrations of about 1 × 10 15 cm −3 . No hints to nitrogen incorporation could be found.
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Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH 3 ) 3 · N(CH 3 ) 3 ‐adduct as precursor
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Autor/in / Beteiligte Person: | Seifert, W. ; Ploska, K. ; Schwetlick, S. ; Butter, E. |
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Zeitschrift: | Crystal Research and Technology, Jg. 24 (1989), Heft 1, S. 29-33 |
Veröffentlichung: | Wiley, 1989 |
Medientyp: | academicJournal |
ISSN: | 0232-1300 |
DOI: | 10.1002/crat.2170240106 |
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