Semiconductor laser and manufacture thereof

PURPOSE:To obtain a semiconductor laser characterized by high light emitting efficiency and a low threshold current value, by simultaneously forming an active layer and the third and fourth clad layers in a planar state, by a chemical vapor growth method of organic metal, by which light is selectively emitted by using a mask. CONSTITUTION:The raw material gases of Hs, AsH3, H2Se, TMGa, TMAl and DEZn are introduced into a chamber 404 through mass-flow controllers (MFC). Then the gases are reacted, and thin films of GaAs, AlGaAs and the like are epitaxially grown. A susceptor 407 is heated to 600-800 deg.C by induction heating using an RF coil 405. Meanwhile, light is emitted from a light source 401 such as an excimer laser unit and projected on a substrate 406 through a mirror 2. A mask 403 is provided in-between. The light is projected on the arbitrary positions of the substrate in correspondence with the mask pattern, and epitaxial growing can be performed. Thus the semiconductor laser characterized by a small threshold current level and high light emitting efficiency can be formed stably at a high yield rate.