Pressure effect on the Fermi surface and electronic structure of LuGa3 and TmGa3
In: Low Temperature Physics, Jg. 31 (2005), Heft 3, S. 313-320
Online
academicJournal
Zugriff:
The Fermi surfaces and cyclotron masses of LuGa3 and TmGa3 compounds are studied by means of the de Haas-van Alphen effect technique under pressure. Highly anisotropic pressure dependences of the de Haas-van Alphen frequencies and cyclotron masses are observed in both compounds. Concurrently, ab initio calculations of the volume-dependent band structures are been carried out for these compounds, including the ferromagnetic-configuration phase of TmGa3, by employing a relativistic version of the full-potential linear muffin-tin orbital method within the local spin-density approximation. The experimental data are analyzed on the basis of the calculated volume-dependent band structures and compared with the corresponding pressure effects in the isostructural compound ErGa3.
Titel: |
Pressure effect on the Fermi surface and electronic structure of LuGa3 and TmGa3
|
---|---|
Autor/in / Beteiligte Person: | Pluzhnikov, V. B. ; Grechnev, G. E. ; Czopnik, A. ; Eriksson, O. |
Link: | |
Zeitschrift: | Low Temperature Physics, Jg. 31 (2005), Heft 3, S. 313-320 |
Veröffentlichung: | AIP Publishing, 2005 |
Medientyp: | academicJournal |
ISSN: | 1063-777X |
DOI: | 10.1063/1.1884445 |
Schlagwort: |
|
Sonstiges: |
|