Low Temperature Laser-Assisted Gas Phase Reactivity of TMGa with NH3 and Oxygen-Containing Compounds (H2O, CH3OH, O(CH3)2) in Constrained Pulsed Expansions

The present work reports on the study of III-V gas phase reactivity in constrained gas pulse expansions of trimethylgallium (TMGa) and oxygen derivative compounds (H 2 O, CH 3 OH, O(CH 3 ) 2 ) with and without ammonia. The precursors are introduced separately into a high vacuum chamber via a multipulsed gas nozzle assembly. The gas mixtures are then exposed to a UV pulse from an ArF excimer laser (λ=193 nm) and the products are mass analyzed with a quadrupole mass spectrometer. The efficient laser-assisted growth of Ga-O-containing clusters in the form of [(CH 3 ) 2 GaOR] x , where R is H or CH 3 , has been revealed. Different behavior can be seen in the reaction of TMG and the oxygen species depending on the presence of H atoms bonded to the oxygen. Significant influence of NH 3 on cluster formation and oxygen incorporation is demonstrated.