Comparative Equilibrium Analysis of Metalorganic Chemical Vapor Deposition (MOCVD) GaAs Growth Using Trimethylgallium (TMGa) with Arsine or Trimethylarsine (TMAs)
In: Japanese Journal of Applied Physics, Jg. 31 (1992), Heft 6R, S. 1721
academicJournal
Zugriff:
A thermodynamic equilibrium model has been employed to determine the equilibrium estate of Trimethylgallium (TMGa)-AsH 3 -H 2 and TMGa-Trimethylarsine (TMAs)-H 2 systems in vapor phase. The analysis has been made for pressure, hydrogen/trimethyl (H 2 /TM) ratio, V/III ratio and various temperature ranges, and includes, in both cases, 33 selected gas-phase species in the presence of solid GaAs. A study of the substitution of arsine for TMAs has been carried out, with regard to relative stabilities of the species and the changes in carbon incorporation. Dependence of carbon impurities on the growth parameters has been analyzed in order to postulate the factors that can influence carbon incorporation.
Titel: |
Comparative Equilibrium Analysis of Metalorganic Chemical Vapor Deposition (MOCVD) GaAs Growth Using Trimethylgallium (TMGa) with Arsine or Trimethylarsine (TMAs)
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Autor/in / Beteiligte Person: | Abril, Evaristo José ; Alonso, Alonso ; Lopez, Miguel ; Miguel Aguilar, Miguel Aguilar |
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Zeitschrift: | Japanese Journal of Applied Physics, Jg. 31 (1992), Heft 6R, S. 1721 |
Veröffentlichung: | IOP Publishing, 1992 |
Medientyp: | academicJournal |
ISSN: | 0021-4922 |
DOI: | 10.1143/jjap.31.1721 |
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