Electrical resistivity anomaly in (Pr1−yMy)1−xCaxCoO3 epitaxial films (M=Y, Gd) fabricated by pulsed laser deposition
In: AIP Advances ; volume 6, issue 2 ; ISSN 2158-3226, 2016
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Zugriff:
(Pr1−yMy)1−xCaxCoO3 epitaxial films (M=Y, Gd) have been successfully fabricated by pulsed laser deposition on the single crystal substrates with different lattice constant. The polycrystalline bulk of this material shows a first-order metal-insulator (MI) transition below the critical temperature. Although ρ(T) of all the as-grown films shows a semiconducting behavior at entire temperature range, an anomalous ρ(T) upturn with wide hysteresis can be clearly seen for the film grown on the SrLaAlO4 (SLAO) substrate, which applied the in-plane compressive stress to the film. Such anomaly in ρ(T) is interpreted as a sign of the first-order phase transition related with the spin-state (SS) transition, which was observed in the polycrystalline bulk.
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Electrical resistivity anomaly in (Pr1−yMy)1−xCaxCoO3 epitaxial films (M=Y, Gd) fabricated by pulsed laser deposition
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Autor/in / Beteiligte Person: | Noda, Y. ; Fujishiro, H. ; Naito, T. ; Ito, A. ; Goto, T. ; Hejtmanek, J. ; Jirak, Z. |
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Zeitschrift: | AIP Advances ; volume 6, issue 2 ; ISSN 2158-3226, 2016 |
Veröffentlichung: | AIP Publishing, 2016 |
Medientyp: | academicJournal |
DOI: | 10.1063/1.4942558 |
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