Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
In: Materials Science in Semiconductor Processing ; volume 101, page 253-261 ; ISSN 1369-8001, 2019
academicJournal
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Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
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Autor/in / Beteiligte Person: | Laifi, J. ; Saidi, C. ; Chaaben, N. ; Bchetnia, A. ; El Gmili, Y. ; Salvestrini, J.P. |
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Zeitschrift: | Materials Science in Semiconductor Processing ; volume 101, page 253-261 ; ISSN 1369-8001, 2019 |
Veröffentlichung: | Elsevier BV, 2019 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.mssp.2019.06.006 |
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