Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
In: Journal of Crystal Growth ; volume 490, page 56-60 ; ISSN 0022-0248, 2018
academicJournal
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Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage
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Autor/in / Beteiligte Person: | Wu, Hualong ; Wang, Hailong ; Chen, Yingda ; Zhang, Lingxia ; Chen, Zimin ; Wu, Zhisheng ; Wang, Gang ; Jiang, Hao ; National key R&D Program of China ; State Key Program of National Natural Science Foundation of China ; Science and Technology Major Project of Guang-dong Province ; Guangdong Natural Science Foundation |
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Zeitschrift: | Journal of Crystal Growth ; volume 490, page 56-60 ; ISSN 0022-0248, 2018 |
Veröffentlichung: | Elsevier BV, 2018 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.jcrysgro.2018.03.020 |
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