A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs
In: Journal of Electronic Materials, Jg. 23 (1994), Heft 8, S. 791-799
academicJournal
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A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs
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Autor/in / Beteiligte Person: | Stockman, S. A. ; Hanson, A. W. ; Colomb, C. M. ; Fresina, M. T. ; Baker, J. E. ; Stillman, G. E. |
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Zeitschrift: | Journal of Electronic Materials, Jg. 23 (1994), Heft 8, S. 791-799 |
Veröffentlichung: | Springer Science and Business Media LLC, 1994 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 |
DOI: | 10.1007/bf02651375 |
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