Development of ZnO:Ga Transparent Conducting Oxide Thin Films through Metalorganic Chemical Vapor Deposition using various Zn and Ga Source Materials

國立臺灣科技大學化學工程系 ; 學位：博士 ; 指導教授：洪儒生 ; The Ga doped-ZnO (GZO) thin film has been demonstrated to have low resistivity and high transparency in the visible spectral range and that is considered as one of the most promising transparent conducting oxide (TCO) for the next generation of transparent electrode materials. There is still much to be explored and understood about main factor that significantly affect to the properties as well as the cost of GZO film growth process before it can be commercially realized. Most notably, the influence of the type of source materials have surprisingly been received less attention, even though the type of sources actually play critically role not only the quality but also the cost of thin films. In this dissertation, we have developed of GZO TCO thin films through metalorganic chemical vapor deposition (MOCVD) using various Zn source materials. We also explored the methodology to increase the light diffuse transmittance through controlling the preferred orientation of polycrystalline GZO films by MOCVD technique using diethyl zinc (DEZn) as the Zn and trimethylgallium (TMG) as a Ga precursor. We prepared Ga-doped ZnO (GZO) films with qualified opto-electric properties through chemical vapor deposition of an inexpensive solution of DEZn in n-hexane (ca. 17 wt.%). The GZO films exhibited low resistivity (3.61  10–4 Ω cm) and high transmittance (85%) in the visible range. Interestingly, post-annealing treatment of the GZO films under N2 at 525 °C for just 10 min increased the number of carbon-interstitial oxygen defects (CZn+2Oi)〃, which played the role of acceptors and enhanced the film properties significantly. This approach potentially allows the fabrication of inexpensive transparent conducting oxides for use in solar cells. Moreover, we also explored the methodology to increase the light diffuse transmittance through controlling the preferred orientation of polycrystalline GZO films grown by the low-pressure chemical vapor deposition (LPCVD) technique. X-ray diffraction ...