METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN
In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY; LU DC; WANG D; WANG XH; LIU XL; DONG JR; GAO WB; LI CJ; LI YYMETAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ,1995,29(0):58-60;; (1995)
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Zugriff:
Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.
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METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN
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Autor/in / Beteiligte Person: | LU, DC ; WANG, D ; WANG, XH ; LIU, XL ; DONG, JR ; GAO, WB ; LI, CJ ; LI, YY ; LU DC CHINESE ACAD SCIINST SEMICONDSEMICOND MAT SCI LABBEIJING 100083PEOPLES R CHINA. |
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Quelle: | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY; LU DC; WANG D; WANG XH; LIU XL; DONG JR; GAO WB; LI CJ; LI YYMETAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY ,1995,29(0):58-60;; (1995) |
Veröffentlichung: | 1995 |
Medientyp: | unknown |
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