Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
In: Journal of Crystal Growth; 260(1-2), pp 18-22 (2004) ; ISSN: 0022-0248, 2004
academicJournal
Zugriff:
We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface.
Titel: |
Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
|
---|---|
Autor/in / Beteiligte Person: | Borgström, Magnus ; Deppert, Knut ; Samuelson, Lars ; Seifert, Werner |
Link: | |
Zeitschrift: | Journal of Crystal Growth; 260(1-2), pp 18-22 (2004) ; ISSN: 0022-0248, 2004 |
Veröffentlichung: | Elsevier, 2004 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.jcrysgro.2003.08.009 |
Schlagwort: |
|
Sonstiges: |
|