Analysis of TMGa/NH 3 /H 2 reaction system in GaN‐MOVPE growth by computational simulation
In: physica status solidi (a), Jg. 203 (2006), Heft 7, S. 1716-1719
academicJournal
Zugriff:
We report the major growth pathways of GaN metalorganic vapor‐phase epitaxial growth from a TMGa/NH 3 /H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga–N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga–N] n was generated by polymerization of Ga–N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Analysis of TMGa/NH 3 /H 2 reaction system in GaN‐MOVPE growth by computational simulation
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Autor/in / Beteiligte Person: | Hirako, A. ; Koiso, S. ; Ohkawa, K. |
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Zeitschrift: | physica status solidi (a), Jg. 203 (2006), Heft 7, S. 1716-1719 |
Veröffentlichung: | Wiley, 2006 |
Medientyp: | academicJournal |
ISSN: | 1862-6300 |
DOI: | 10.1002/pssa.200565211 |
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