A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
In: Superlattices and Microstructures ; volume 92, page 316-329 ; ISSN 0749-6036, 2016
academicJournal
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A two dimensional analytical modeling of surface potential in triple metal gate (TMG) fully-depleted Recessed-Source/Drain (Re-S/D) SOI MOSFET
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Autor/in / Beteiligte Person: | Priya, Anjali ; Mishra, Ram Awadh |
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Zeitschrift: | Superlattices and Microstructures ; volume 92, page 316-329 ; ISSN 0749-6036, 2016 |
Veröffentlichung: | Elsevier BV, 2016 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.spmi.2016.01.041 |
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