Fabrication of fully epitaxial Co2MnSi∕MgO∕Co2MnSi magnetic tunnel junctions
In: Journal of Applied Physics ; volume 103, issue 7 ; ISSN 0021-8979 1089-7550, 2008
academicJournal
Zugriff:
Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with full-Heusler alloy Co2MnSi thin films as both lower and upper electrodes and with a MgO tunnel barrier. The fabricated MTJs showed clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 179% at room temperature (RT) and 683% at 4.2K. In addition, the TMR ratio exhibited oscillations as a function of the MgO tunnel barrier thickness (tMgO) at RT, having a period of 0.28nm, for tMgO ranging from 1.8to3.0nm.
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Fabrication of fully epitaxial Co2MnSi∕MgO∕Co2MnSi magnetic tunnel junctions
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Autor/in / Beteiligte Person: | Ishikawa, Takayuki ; Hakamata, Shinya ; Matsuda, Ken-ichi ; Uemura, Tetsuya ; Yamamoto, Masafumi |
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Zeitschrift: | Journal of Applied Physics ; volume 103, issue 7 ; ISSN 0021-8979 1089-7550, 2008 |
Veröffentlichung: | AIP Publishing, 2008 |
Medientyp: | academicJournal |
DOI: | 10.1063/1.2843756 |
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