High-speed growth of thick high-purity β-Ga 2 O 3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
In: Applied Physics Express, Jg. 16 (2023), Heft 9, S. 095504
academicJournal
Zugriff:
High-speed growth of thick, high-purity β -Ga 2 O 3 homoepitaxial layers on (010) β -Ga 2 O 3 substrates by low-pressure hot-wall metalorganic vapor phase epitaxy was investigated using trimethylgallium (TMGa) as the Ga precursor. When the reactor pressure was 2.4–3.4 kPa, the growth temperature was 1000 °C, and a high input VI/III (O/Ga) ratio was used, the growth rate of β -Ga 2 O 3 could be increased linearly by increasing the TMGa supply rate. A thick layer was grown at a growth rate of 16.2 μ m h −1 without twinning. Incorporated impurities were not detected, irrespective of the growth rate, demonstrating the promising nature of β -Ga 2 O 3 growth using TMGa.
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High-speed growth of thick high-purity β-Ga 2 O 3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
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Autor/in / Beteiligte Person: | Yoshinaga, Junya ; Tozato, Haruka ; Okuyama, Takahito ; Sasaki, Shogo ; Piao, Guanxi ; Ikenaga, Kazutada ; Goto, Ken ; Ban, Yuzaburo ; Kumagai, Yoshinao ; Ministry of Internal Affairs and Communications |
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Zeitschrift: | Applied Physics Express, Jg. 16 (2023), Heft 9, S. 095504 |
Veröffentlichung: | IOP Publishing, 2023 |
Medientyp: | academicJournal |
ISSN: | 1882-0778 |
DOI: | 10.35848/1882-0786/acf8ae |
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