Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
In: Appl. Phys. Express 14 025501 (2021); (2020)
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report
Zugriff:
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.
Comment: 22 pages, 4 figures
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Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels
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Autor/in / Beteiligte Person: | Ranga, Praneeth ; Bhattacharyya, Arkka ; Chmielewski, Adrian ; Roy, Saurav ; Sun, Rujun ; Scarpulla, Michael A. ; Alem, Nasim ; Krishnamoorthy, Sriram |
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Quelle: | Appl. Phys. Express 14 025501 (2021); (2020) |
Veröffentlichung: | 2020 |
Medientyp: | report |
DOI: | 10.35848/1882-0786/abd675 |
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