MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN
In: Journal of Electronic Materials, Jg. 14 (1985-09-01), Heft 5, S. 633-644
Online
serialPeriodical
Zugriff:
Ga begins to deposit from a stream of trimethylgallium (TMG) in H2at a minimum temperature of 475‡C. Addition of sufficient amounts of NH2results in the growth of textured polycrystalline GaN on basal plane sapphire substrates above 500‡C. A minimum temperature of 800‡C is required for the epitaxial growth of GaN on the substrate. Under similar conditions, but with the TMG replaced with trimethylaluminum (TMA), polycrystalline A1N begins forming at 400‡C (in the absence of NH3,, the TMA starts pyrolyzing at 300‡C), but single crystal growth of A1N requires a temperature of at least 1200‡C. Epitaxial single crystal layers of AlxGa1-xN can be grown in the temperature range 800−1200‡C, tne minimum temperature being approximately proportional to x, but preferential deposition of A1N on the hot walls of the reactor (>400‡C) precludes precise control of the alloy composition. This predeposition of A1N can be retarded by keeping the walls below 400‡C by using a water-cooled jacket, by rapid flow-rates, or by injecting the TMA through a nozzle close to the surface of the substrate.
Titel: |
MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN
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Autor/in / Beteiligte Person: | Matloubian, M. ; Gershenzon, M. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 14 (1985-09-01), Heft 5, S. 633-644 |
Veröffentlichung: | 1985 |
Medientyp: | serialPeriodical |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/BF02654029 |
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