Influence of H2Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
In: Japanese Journal of Applied Physics, Jg. 23 (1984-12-01), Heft 12, S. L877
Online
serialPeriodical
Zugriff:
The influence of H2overpressure on the electrical and optical properties of GaAs epitaxial layer grown by the low-pressure MOCVD of TMG/AsH3/H2system was studied. It was demonstrated that high H2overpressure was not necessary in the reaction process to reduce carbon contamination for low-pressure MOCVD. The carbon incorporation process in low-pressure MOCVD was discussed briefly.
Titel: |
Influence of H2Overpressure on the Properties of GaAs Grown by Low-Pressure MOCVD
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Autor/in / Beteiligte Person: | Mori, Hideki ; Takagishi, Shigenori |
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Zeitschrift: | Japanese Journal of Applied Physics, Jg. 23 (1984-12-01), Heft 12, S. L877 |
Veröffentlichung: | 1984 |
Medientyp: | serialPeriodical |
ISSN: | 0021-4922 (print) ; 1347-4065 (print) |
DOI: | 10.1143/JJAP.23.L877 |
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