Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal--Oxide--Semiconductor Field Effect Transistor with High-$\kappa$ Gate Dielectric and Tri-Material Gate Stack
In: Japanese Journal of Applied Physics, Jg. 49 (2010-12-25), Heft 12, S. 124202-124206
Online
serialPeriodical
Zugriff:
A novel cylindrical surrounding-gate metal--oxide--semiconductor field effect transistor with high-$\kappa$ gate dielectric and tri-material gate stack (TMGCSG MOSFET) is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, electric field, and threshold voltage. It is found that TMGCSG MOSFET can effectively suppress short-channel effects and hot-carrier effects, and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off for TMGCSG MOSFET can be significantly reduced by adopting both a small effective stack-gate oxide thickness and a small radius silicon channel. The accuracy of the analytical models is verified by its good agreement with the three-dimensional numerical device simulator DESSIS.
Titel: |
Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal--Oxide--Semiconductor Field Effect Transistor with High-$\kappa$ Gate Dielectric and Tri-Material Gate Stack
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Autor/in / Beteiligte Person: | Li, Cong ; Zhuang, Yi-Qi ; Han, Ru |
Link: | |
Zeitschrift: | Japanese Journal of Applied Physics, Jg. 49 (2010-12-25), Heft 12, S. 124202-124206 |
Veröffentlichung: | 2010 |
Medientyp: | serialPeriodical |
ISSN: | 0021-4922 (print) ; 1347-4065 (print) |
DOI: | 10.1143/JJAP.49.124202 |
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