Mass spectroscopy study of GaN metalorganic chemical vapor deposition
In: Journal of Electronic Materials, Jg. 25 (1996-09-07), Heft 9, S. 1554-1560
Online
serialPeriodical
Zugriff:
Abstract: Metalorganic chemical vapor phase deposition of GaN on (100) GaAs has been studied using mass spectroscopy. With increasing substrate temperature, the amount of decomposed trimethylgallium (TMGa) was observed to increase exponentially with a characteristic energy of 1.5 eV. The presence of NH 3 was found to suppress the production of CH 3 in the gas phase. This implies that CH 3 of TMGa reacts with the hydrogen atom of NH 3 , forming CH 4 as a main gas product. Studies of nitrogen evaporation from the growth surface when TMGa flow was off lead to the conclusion that increased growth rate could result in decreased background electron concentration due to nitrogen vacancy. The presence of NH 3 significantly promotes the decomposition of TMGa. Desorption of excess Ga atoms from the growth surface at low NH 3 flow rates takes place as suggested by the increased ratio of peak intensity of Ga (m/e = 69) to that of DMGa ((CH 3 ) 2 Ga, m/e- 99) with decreasing NH 3 flow rate.
Titel: |
Mass spectroscopy study of GaN metalorganic chemical vapor deposition
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Autor/in / Beteiligte Person: | Pakk, Yongjo ; Pavlidis, Dimitris |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 25 (1996-09-07), Heft 9, S. 1554-1560 |
Veröffentlichung: | 1996 |
Medientyp: | serialPeriodical |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/BF02655399 |
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