Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P
In: Journal of Electronic Materials, Jg. 20 (1991), Heft 1, S. 97-101
Online
serialPeriodical
Zugriff:
This paper reports the results of atmospheric pressure organometallic vapor phase epitaxial growth of (AlxGa1-x)0.510.49P thin films using tertiarybutylphosphine (TBP) as the phosphorus source. The trimethylalkyls were used as group III sources. The growth temperature was 680° C. It was observed that V/III ratio dramatically affected the surface morphology and photoluminescence (PL). The epilayers grown at a V/III ratio lower than 60 had rough surfaces and weak PL emission. An input V/III ratio larger than 70 was required to obtain good surfaces and strong PL emission. Good quality (AlxGa1-x)0.510.49P epilayers forx≤ 0.62 were obtained at a V/III ratio of 85. The surface morphologies were smooth except for the occurrence of dense oval-shaped hillocks forx> 0.42. The Al distribution coefficient using TBP is the same as for phosphine (PH3), which was used as the phosphorus source in previous AlGalnP growth. No parasitic reactions between TBP and trimethylalkyls were observed. 10 and 300 K PL emission was observed for all epilayers withx≤ 0.62. However, the PL peak energy did not follow the band gap, as obtained for (AlxGa1-x)0.510.49P epilayers grown using PH3. The PL peak energy at both 10 and 300 K increased with increasingxforx≤ 0.35, and then became nearly constant with further increases inx. In this region the PL is believed to be from a process involving a deep energy level, induced by an impurity from the TBP, bound to theXconduction band minimum. It was concluded that TBP has the potential to replace PH3for OMVPE growth of Al-containing compounds, although the purity needs to be improved.
Titel: |
Use of tertiarybutylphosphine for OMVPE growth of (AlxGa1-x)o.51 In0.49P
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Autor/in / Beteiligte Person: | Cao, D. S. ; Stringfellow, G. B. |
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Zeitschrift: | Journal of Electronic Materials, Jg. 20 (1991), Heft 1, S. 97-101 |
Veröffentlichung: | 1991 |
Medientyp: | serialPeriodical |
ISSN: | 0361-5235 (print) ; 1543-186X (print) |
DOI: | 10.1007/BF02651971 |
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