Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator.
In: Crystal Growth & Design, Jg. 23 (2023-11-01), Heft 11, S. 7821-7828
Online
academicJournal
Zugriff:
Titel: |
Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator.
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Autor/in / Beteiligte Person: | Yan, Zhao ; Ratiu, Bogdan-Petrin ; Zhang, Weiwei ; Abouzaid, Oumaima ; Ebert, Martin ; Reed, Graham T. ; Thomson, David J. ; Li, Qiang |
Link: | |
Zeitschrift: | Crystal Growth & Design, Jg. 23 (2023-11-01), Heft 11, S. 7821-7828 |
Veröffentlichung: | 2023 |
Medientyp: | academicJournal |
ISSN: | 1528-7483 (print) |
DOI: | 10.1021/acs.cgd.3c00633 |
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