Ultrafast Carrier Recombination and Transient Lattice Temperature Changes in 25 nm Thin Hydrogenated Amorphous Silicon Films.
In: ACS Applied Electronic Materials, Jg. 1 (2019-11-26), Heft 11, S. 2396-2405
academicJournal
Zugriff:
Titel: |
Ultrafast Carrier Recombination and Transient Lattice Temperature Changes in 25 nm Thin Hydrogenated Amorphous Silicon Films.
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Autor/in / Beteiligte Person: | Scholz, Mirko ; Bablich, Andreas ; Kienitz, Paul ; Bornemann, Rainer ; Bolívar, Peter Haring ; Lenzer, Thomas ; Oum, Kawon |
Zeitschrift: | ACS Applied Electronic Materials, Jg. 1 (2019-11-26), Heft 11, S. 2396-2405 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 2637-6113 (print) |
DOI: | 10.1021/acsaelm.9b00558 |
Sonstiges: |
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