High Figure of Merit in Gallium-Doped Nanostructured n‑Type PbTe‑xGeTe with Midgap States.
In: Journal of the American Chemical Society, Jg. 141 (2019-10-09), Heft 40, S. 16169-16177
Online
academicJournal
Zugriff:
Titel: |
High Figure of Merit in Gallium-Doped Nanostructured n‑Type PbTe‑xGeTe with Midgap States.
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Autor/in / Beteiligte Person: | Luo, Zhong-Zhen ; Cai, Songting ; Hao, Shiqiang ; Bailey, Trevor P. ; Su, Xianli ; Spanopoulos, Ioannis ; Hadar, Ido ; Tan, Gangjian ; Luo, Yubo ; Xu, Jianwei ; Uher, Ctirad ; Wolverton, Christopher ; Dravid, Vinayak P. ; Yan, Qingyu ; Kanatzidis, Mercouri G. |
Link: | |
Zeitschrift: | Journal of the American Chemical Society, Jg. 141 (2019-10-09), Heft 40, S. 16169-16177 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0002-7863 (print) |
DOI: | 10.1021/jacs.9b09249 |
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