Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine.
In: Applied Physics Letters, Jg. 57 (1990-09-10), Heft 11, S. 1120-1122
Online
academicJournal
Zugriff:
Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high-mobility GaAs are described in this letter. Low-temperature photoluminescence and temperature-dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities <1014 cm-3 were measured in the highest purity samples. [ABSTRACT FROM AUTHOR]
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Titel: |
Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine.
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Autor/in / Beteiligte Person: | Hanna, M. C. ; Lu, Z. H. ; Oh, E. G. ; Mao, E. ; Majerfeld, A. |
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Zeitschrift: | Applied Physics Letters, Jg. 57 (1990-09-10), Heft 11, S. 1120-1122 |
Veröffentlichung: | 1990 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.103509 |
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