Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy.
In: Applied Physics Letters, Jg. 57 (1990-07-16), Heft 3, S. 279-281
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Zugriff:
The decomposition of trimethylgallium (TMGa) on the gallium-rich (4×6) and (1×6) GaAs (100) surface was studied with temperature programmed desorption, Auger electron spectroscopy, and low-energy electron diffraction. TMGa was found to dissociatively chemisorb on the gallium-rich surfaces, apparently at the gallium vacancies that exist on these surfaces. We have unambiguously identified methyl radicals desorbing from the surface with the maximum rate at ∼440 °C following a saturation TMGa exposure. Since TMGa was shown to decompose on the clean, gallium-rich GaAs (100) surfaces, the self-limiting deposition of gallium during atomic layer epitaxy must be due to the presence of surface methyl groups which inhibit further TMGa dissociative chemisorption. [ABSTRACT FROM AUTHOR]
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Titel: |
Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy.
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Autor/in / Beteiligte Person: | Creighton, J. Randall ; Lykke, Keith R. ; Shamamian, Vasgen A. ; Kay, Bruce D. |
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Zeitschrift: | Applied Physics Letters, Jg. 57 (1990-07-16), Heft 3, S. 279-281 |
Veröffentlichung: | 1990 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.103714 |
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