Influence of the DX center on capacitance-voltage profiling for Si δ -doped AlxGa1-xAs.
In: Journal of Applied Physics, Jg. 77 (1995-03-01), Heft 5, S. 2046-2051
Online
academicJournal
Zugriff:
Investigates the capacitance-voltage (C-V) characteristics of silicon-doped AlGaAs structures. Mechanism responsible for hysteresis and abnormal phenomena in C-V curves at low temperatures; Description of the observed electron-accumulation peaks; Determination of the dopant distribution.
Titel: |
Influence of the DX center on capacitance-voltage profiling for Si δ -doped AlxGa1-xAs.
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Autor/in / Beteiligte Person: | Yang, G. M. ; Seo, K. S. ; Choe, Byung-Doo |
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Zeitschrift: | Journal of Applied Physics, Jg. 77 (1995-03-01), Heft 5, S. 2046-2051 |
Veröffentlichung: | 1995 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/1.358843 |
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