Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy.
In: Journal of Electronic Materials, Jg. 23 (1994-02-01), Heft 2, S. 185-189
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Zugriff:
In experiments employing a conventional low-pressure, rotating-disk organome-tallic vapor phase epitaxy reactor, GaAs epilayers have been grown at substrate temperatures ranging from 425 to 500°C by exposing the substrate alternately to trimethylgallium (TMG) and AsH.The GaAs growth rate R was approximately constant with TMG flow rate, but with increasing TMG injection time t, it increased to more than one monolayer per TMG/AsH cycle without saturating. Although growth was not self-limiting, for one specific combination of temperature and t, a value of R = 1 monolayer/cycle could be achieved by using t values decreasing from 10.8 s at 425°C to 0.9 s at 500°C in accordance with an Arrhenius relationship between 1/t and absolute temperature. [ABSTRACT FROM AUTHOR]
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Titel: |
Adjusting trimethylgallium injection time to explore atomic layer epitaxy of GaAs between 425 and 500°C by organometallic vapor phase epitaxy.
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Autor/in / Beteiligte Person: | Wang, C. ; Tracy, D. |
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Zeitschrift: | Journal of Electronic Materials, Jg. 23 (1994-02-01), Heft 2, S. 185-189 |
Veröffentlichung: | 1994 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/BF02655267 |
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