An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium.
In: Journal of Electronic Materials, Jg. 11 (1982-11-01), Heft 6, S. 1115-1137
Online
academicJournal
Zugriff:
An analytical study of the impurities in trimethylgallium (TMGa) and subsequent correlation of the effect of these impurities on resulting GaAs films grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of using fractional distillation techniques to improve the quality of TMGa and to help isolate and identify major source impurities in TMGa is detailed. Photothermal ionization data are presented which show the residual donor species present and their relative concentrations in the epitaxial layers. Correlations of the residual donor concentrations with TMGa preparation are made. It is demonstrated that high purity GaAs with μ K ≈ 125,000 cm/V-sec can be grown by MOCVD using repurified trimethylgallium and arsine source materials. [ABSTRACT FROM AUTHOR]
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Titel: |
An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium.
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Autor/in / Beteiligte Person: | Hess, K. ; Dapkus, P. ; Manasevit, H. ; Low, T. ; Skromme, B. ; Stillman, G. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 11 (1982-11-01), Heft 6, S. 1115-1137 |
Veröffentlichung: | 1982 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/BF02658919 |
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