Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co<subscript>2</subscript>MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier.
In: Applied Physics Letters, Jg. 98 (2011-06-06), Heft 23, S. 232109-232111
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Zugriff:
The effects of MgO tunnel barriers on both junction resistance and tunneling anisotropic magnetoresistance (TAMR) characteristics of Co 2 MnSi(CMS)/MgO/n-GaAs junctions and Co 50 Fe 50 (CoFe)/MgO/n-GaAs junctions were investigated. The resistance-area (RA) product of the CMS/MgO/n-GaAs junctions showed an exponential dependence on MgO thickness (t MgO ), indicating that the MgO layer acts as a tunneling barrier. The RA product of CMS/MgO/n-GaAs with t MgO <1 nm was smaller than that of the sample without MgO. The observed spin-valvelike magnetoresistance of CMS/n-GaAs and CoFe/n-GaAs Schottky tunnel junctions attributed to the TAMR effect did not appear in the cases of CMS/MgO/n-GaAs and CoFe/MgO/n-GaAs tunnel junctions. The lowering of the RA product and the suppression of the TAMR effect caused by inserting a thin MgO layer between CMS and n-GaAs were both possibly due to suppression of the Fermi-level pinning of GaAs and lowering of the Schottky barrier height. [ABSTRACT FROM AUTHOR]
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Titel: |
Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co<subscript>2</subscript>MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier.
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Autor/in / Beteiligte Person: | Akiho, Takafumi ; Uemura, Tetsuya ; Harada, Masanobu ; Matsuda, Ken-ichi ; Yamamoto, Masafumi |
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Zeitschrift: | Applied Physics Letters, Jg. 98 (2011-06-06), Heft 23, S. 232109-232111 |
Veröffentlichung: | 2011 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.3595311 |
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