Study of optical and electrical properties of Al<subscript>x</subscript>Ga<subscript>1−x</subscript>Sb grown by metalorganic chemical vapor deposition.
In: Journal of Electronic Materials, Jg. 30 (2001-08-01), Heft 8, S. 965-971
Online
academicJournal
Zugriff:
Al x Ga 1−x Sb films in the regime 0×0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film properties, including the effect of V/III ratio and growth temperature on electrical and optical properties. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. All epilayers grown exhibit p-type behavior. The mobility decreases and the carrier concentration increases sharply when a small amount of Al is incorporated into GaSb. The sharp cutoff and Fabry-Perot oscillations of the transmission spectra of the AlGaSb layers confirm the high quality of the films. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere. [ABSTRACT FROM AUTHOR]
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Titel: |
Study of optical and electrical properties of Al<subscript>x</subscript>Ga<subscript>1−x</subscript>Sb grown by metalorganic chemical vapor deposition.
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Autor/in / Beteiligte Person: | Ramelan, A. ; Drozdowicz-Tomsia, K. ; Goldys, E. ; Tansley, T. |
Link: | |
Zeitschrift: | Journal of Electronic Materials, Jg. 30 (2001-08-01), Heft 8, S. 965-971 |
Veröffentlichung: | 2001 |
Medientyp: | academicJournal |
ISSN: | 0361-5235 (print) |
DOI: | 10.1007/BF02657718 |
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