Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(Al<subscript>x</subscript>Ga<subscript>1-x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> single crystals.
In: Journal of Materials Chemistry C, Jg. 12 (2024-04-21), Heft 15, S. 5631-5638
Online
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Zugriff:
In order to balance the contradiction between on and off performances of the Schottky diodes, Si-doped β-(Al x Ga 1-x ) 2 O 3 (β-AlGaO) single crystals were designed based on the bandgap and impurity engineering of β-Ga 2 O 3 . The bandgap became larger with Al element doping. The photoluminescence properties of Si-doped β-AlGaO were measured and the emission band was separated into three Gaussian peaks with wavelengths of 372 nm, 410 nm, and 453 nm. These peaks were derived from a self-trapped hole (STH), (V Ga + V O ) 1- , and V Ga 2- , respectively. This demonstrated that Al only acted on valence and conduction bands, without introducing intermediate transition levels, indicating excellent bandgap regulation. The thermal properties of Si-doped β-AlGaO were demonstrated for the first time. Noticeably, a carrier concentration of 4.61 X 10 18 cm -3 and a resistivity of 0.099 O cm were observed at room temperature in Si-doped b-AlGaO. At low temperatures, the dominant mechanism was ionized impurity scattering, while at high temperatures, optical phonon scattering became dominant. The on-resistance of Schottky barrier diodes (SBDs) prepared using this material was only 1.57 mO cm², and the Schottky barrier was as high as 1.21 eV. At similar Schottky barrier heights, the on-resistance was 10 times lower compared to β-Ga 2 O 3 based SBDs. In addition, the device has a high forward current density (J @2V ) of 521 A cm -2 at a forward voltage of 2.0 V and an ON-/OFF-current ratio of up to 10 9 . This work presents a viable approach for fabricating high-performance vertical structure devices using Si-doped β-AlGaO materials based on the bandgap structure and impurity engineering. [ABSTRACT FROM AUTHOR]
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Titel: |
Bandgap engineering and Schottky barrier modulation of ultra-wide bandgap Si-doped β-(Al<subscript>x</subscript>Ga<subscript>1-x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> single crystals.
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Autor/in / Beteiligte Person: | Liu, Yiyuan ; He, Qiming ; Mu, Wenxiang ; Jia, Zhitai ; Xu, Guangwei ; Long, Shibing ; Tao, Xutang |
Link: | |
Zeitschrift: | Journal of Materials Chemistry C, Jg. 12 (2024-04-21), Heft 15, S. 5631-5638 |
Veröffentlichung: | 2024 |
Medientyp: | academicJournal |
ISSN: | 2050-7526 (print) |
DOI: | 10.1039/d3tc04170k |
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