Pressure effect on the Fermi surface and electronic structure of LuGa<subscript>3</subscript> and TmGa<subscript>3</subscript>.

The Fermi surfaces and cyclotron masses of LuGa 3 and TmGa 3 compounds are studied by means of the de Haas-van Alphen effect technique under pressure. Highly anisotropic pressure dependences of the de Haas-van Alphen frequencies and cyclotron masses are observed in both compounds. Concurrently, ab initio calculations of the volume-dependent band structures are been carried out for these compounds, including the ferromagnetic-configuration phase of TmGa 3 , by employing a relativistic version of the full-potential linear muffin-tin orbital method within the local spin-density approximation. The experimental data are analyzed on the basis of the calculated volume-dependent band structures and compared with the corresponding pressure effects in the isostructural compound ErGa 3 . © 2005 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Copyright of Low Temperature Physics is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)