Temperature Effect on Analog/RF and Linearity Parameters of Stacked Oxide TMG FinFET.
In: SILICON (1876990X), Jg. 14 (2022-10-01), Heft 15, S. 9997-10006
Online
academicJournal
Zugriff:
This manuscript aims to design an optimized TMG FinFET by applying dielectric material engineering. In this technique, HfO 2 is stacked over SiO 2 at the oxide layer to reap the dual benefits of gate engineering and dielectric material engineering, leading to enhanced ON-state current, suppressed OFF-state current. The semiconductor devices are sensitive to temperature variation, so the performance parameters also deviate with temperature. Therefore, a comprehensive study is conducted to investigate the impact of temperature variation from 230K to 400K on transfer characteristics and analog/RF parameters of proposed FinFETs. For low power high-frequency devices, a distortionless output response is desired, which does not show variation with change in operating temperature. Therefore, a detailed study is conducted to study the impact of temperature on the linearity parameters of the proposed device. This compressive investigation on the proposed device's performance parameters is essential from the design point of view. [ABSTRACT FROM AUTHOR]
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Titel: |
Temperature Effect on Analog/RF and Linearity Parameters of Stacked Oxide TMG FinFET.
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Autor/in / Beteiligte Person: | Yadav, Dharmendra Singh ; Saraswat, Somya |
Link: | |
Zeitschrift: | SILICON (1876990X), Jg. 14 (2022-10-01), Heft 15, S. 9997-10006 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 1876-990X (print) |
DOI: | 10.1007/s12633-022-01664-0 |
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