Coherently strained (001) β-(Al<subscript>x</subscript>Ga<subscript>1−x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> thin films on β-Ga<subscript>2</subscript>O<subscript>3</subscript>: Growth and compositional analysis.

In this work, we report on the growth of (001) β-(Al x Ga 1−x ) 2 O 3 films in molecular beam epitaxy via metal oxide-catalyzed epitaxy. Films with Al contents up to 15% were grown and the Al content was measured with atom probe tomography. A relationship between the Al content and the out-of-plane lattice parameter was derived for both (001) and (100) orientations. Transmission electron microscopy showed no evidence of extended defects in (001) β-(Al x Ga 1−x ) 2 O 3 , and reciprocal space maps confirmed that β-(Al x Ga 1−x ) 2 O 3 films were coherently strained to (001) β-Ga 2 O 3 . Sn was also demonstrated to act as a surfactant for (001) β-(Al x Ga 1−x ) 2 O 3 growth, allowing for high-quality, uniform films with smooth morphologies. [ABSTRACT FROM AUTHOR]

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