Al<subscript>x</subscript>In<subscript>y</subscript>Ga<subscript>1 – x – y</subscript>P<subscript>z</subscript>As<subscript>1 – z</subscript>/GaAs Graded-Gap Heterostructures for Photovoltaic Converters.
In: Technical Physics Letters, Jg. 48 (2022-02-01), Heft 2, S. 82-85
Online
academicJournal
Zugriff:
We grew Al x In y Ga 1 – x – y P z As 1 – z /GaAs graded-gap heterostructures by temperature-gradient zone recrystallization with reciprocating motion of the liquid zone, with the band gap varying from 1.43 to 2.2 eV. The effect of technological parameters on the change in the band gap of grown Al x In y Ga 1 – x – y P z As 1 – z solid solutions is studied. The maximum band-gap gradient of 10 490 eV/cm was achieved in the p-Al x In y Ga 1 – x – y P z As 1 – z /n-GaAs heterostructure, and the external quantum yield increased in the wavelength range of 500–900 nm. [ABSTRACT FROM AUTHOR]
Copyright of Technical Physics Letters is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Titel: |
Al<subscript>x</subscript>In<subscript>y</subscript>Ga<subscript>1 – x – y</subscript>P<subscript>z</subscript>As<subscript>1 – z</subscript>/GaAs Graded-Gap Heterostructures for Photovoltaic Converters.
|
---|---|
Autor/in / Beteiligte Person: | Lunin, L. S. ; Lunina, M. L. ; Alfimova, D. L. ; Pashchenko, A. S. ; Yakovenko, N. A. ; Pashchenko, O. S. |
Link: | |
Zeitschrift: | Technical Physics Letters, Jg. 48 (2022-02-01), Heft 2, S. 82-85 |
Veröffentlichung: | 2022 |
Medientyp: | academicJournal |
ISSN: | 1063-7850 (print) |
DOI: | 10.1134/S1063785022030087 |
Schlagwort: |
|
Sonstiges: |
|