Theoretical study on the effect of H<subscript>2</subscript> and NH<subscript>3</subscript> on trimethylgallium decomposition process in GaN MOVPE.
In: Japanese Journal of Applied Physics, Jg. 60 (2021-04-01), Heft 4, S. 1-6
Online
academicJournal
Zugriff:
We investigate the decomposition process of trimethylgallium (TMGa) during GaN metal organic vapor phase epitaxy in detail by using ab inito calculations. We analyze the decomposition rate of TMGa by estimating Gibbs energy of activation including H 2 as well as NH 3 effects. Our obtained main reaction pathway of TMGa decomposition is as follows: Ga(CH 3 ) 3 + 3H 2 + NH 3 → Ga(CH 3 ) 2 NH 2 + 3H 2 + CH 4 → Ga(CH 3 ) 2 H + 2H 2 + NH 3 +CH 4 → GaCH 3 HNH 2 + 2H 2 + 2CH 4 → GaCH 3 H 2 + H 2 + NH 3 + 2CH 4 → GaH 2 NH 2 + H 2 + 3CH 4 → GaH 3 + NH 3 + 3CH 4 . Our proposed TMGa decomposition pathway can represent the actual epitaxial growth phenomenon by considering neither polymerization reactions nor radical reactions, which are now widely adopted in fluid simulations of crystal growth. Moreover, our proposed pathway is in good agreement with the experiments. [ABSTRACT FROM AUTHOR]
Copyright of Japanese Journal of Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Titel: |
Theoretical study on the effect of H<subscript>2</subscript> and NH<subscript>3</subscript> on trimethylgallium decomposition process in GaN MOVPE.
|
---|---|
Autor/in / Beteiligte Person: | Sakakibara, Soma ; Chokawa, Kenta ; Araidai, Masaaki ; Kusaba, Akira ; Kangawa, Yoshihiro ; Shiraishi, Kenji |
Link: | |
Zeitschrift: | Japanese Journal of Applied Physics, Jg. 60 (2021-04-01), Heft 4, S. 1-6 |
Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
ISSN: | 0021-4922 (print) |
DOI: | 10.35848/1347-4065/abf089 |
Sonstiges: |
|