The effect of platinum contact metallization on Cu/Sn bonding.
In: Journal of Materials Science: Materials in Electronics, Jg. 29 (2018-09-01), Heft 17, S. 15212-15222
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Zugriff:
In this work, formation and evolution of microstructures in CuSn/Pt bonding were investigated after 320 °C reflow process as well as after high temperature storage test at 150 °C. Sputtered thin film platinum on silicon wafer and high purity platinum sheet were applied as contact metallizations for electroplated copper-tin based bonding metallurgy. As bonded microstructure showed PtSn 4 intermetallic compound growth at the Pt/Sn interface, and both Cu 6 Sn 5 and Cu 3 Sn phases formed at the Cu/Sn fiinterface. Both hexagonal and monoclinic Cu 6 Sn 5 were found to coexist after 1000 h high temperature storage test. Platinum was discovered to dissolve into the Cu 6 Sn 5 phase during soldering process and form (Cu, Pt) 6 Sn 5 intermetallic compound exhibiting hexagonal allotropy. Meanwhile, under annealing, monoclinic Cu 6 Sn 5 phase layer without platinum was observed to form between (Cu, Pt) 6 Sn 5 grains and tin. Thermodynamic analysis was performed in order to reason the effects of Pt on the phase equilibria and phase stabilities. Results show that platinum has a significant impact on the stability of hexagonal Cu 6 Sn 5 . [ABSTRACT FROM AUTHOR]
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Titel: |
The effect of platinum contact metallization on Cu/Sn bonding.
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Autor/in / Beteiligte Person: | Rautiainen, Antti ; Ross, Glenn ; Vuorinen, Vesa ; Dong, Hongqun ; Paulasto-Kröckel, Mervi |
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Zeitschrift: | Journal of Materials Science: Materials in Electronics, Jg. 29 (2018-09-01), Heft 17, S. 15212-15222 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0957-4522 (print) |
DOI: | 10.1007/s10854-018-9663-2 |
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