Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process.
In: Indian Journal of Physics, Jg. 92 (2018-05-01), Heft 5, S. 655-660
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academicJournal
Zugriff:
The hydrogen dissociation and its effect on the GaN film growth in the ECR-PECVD process are investigated in this paper. We use N 2 and trimethylgallium (TMG) as N and Ga sources respectively in the ECR- PECVD process. The results show that the rate of hydrogen dissociation increases with the microwave power and it becomes higher at high microwave power (> 500 W). However, this population increase of the H species dissociated from the TMG gas in ECR plasma is not enough to change the growth condition from Ga-rich to N-rich. [ABSTRACT FROM AUTHOR]
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Titel: |
Hydrogen dissociation in the deposition of GaN films with ECR-PECVD process.
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Autor/in / Beteiligte Person: | Fu, S. L. ; Wang, C. A. ; Ding, L. C. ; Qin, Y. X. |
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Zeitschrift: | Indian Journal of Physics, Jg. 92 (2018-05-01), Heft 5, S. 655-660 |
Veröffentlichung: | 2018 |
Medientyp: | academicJournal |
ISSN: | 0973-1458 (print) |
DOI: | 10.1007/s12648-017-1142-8 |
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