Magnetic and transport properties of the V[sub 2]–VI[sub 3] diluted magnetic semiconductor Sb[sub 2-x]Mn[sub x]Te[sub 3].
In: Journal of Applied Physics, Jg. 94 (2003-12-15), Heft 12, S. 7631-7635
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Zugriff:
We have measured electrical and magnetic properties of single crystals of Sb[sub 2-x]Mn[sub x]Te[sub 3] with x=0–0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie–Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn[sup 2+] state with S=5/2. Contrary to the case of III–V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V[sub 2]–VI[sub 3] diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
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Titel: |
Magnetic and transport properties of the V[sub 2]–VI[sub 3] diluted magnetic semiconductor Sb[sub 2-x]Mn[sub x]Te[sub 3].
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Autor/in / Beteiligte Person: | Dyck, J. S. ; Scaron;vanda, P. ; Lošták, P. ; Horák, J. ; Chen, W. ; Uher, C. |
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Zeitschrift: | Journal of Applied Physics, Jg. 94 (2003-12-15), Heft 12, S. 7631-7635 |
Veröffentlichung: | 2003 |
Medientyp: | academicJournal |
ISSN: | 0021-8979 (print) |
DOI: | 10.1063/1.1626803 |
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