In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.
In: Nature communications, Jg. 14 (2023-12-09), Heft 1, S. 8174
Online
academicJournal
Zugriff:
The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO 3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.
(© 2023. The Author(s).)
| Titel: |
In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film.
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| Autor/in / Beteiligte Person: | Cai, X ; Chen, C ; Xie, L ; Wang, C ; Gui, Z ; Gao, Y ; Kentsch, U ; Zhou, G ; Gao, X ; Chen, Y ; Zhou, S ; Gao, W ; Liu, JM ; Zhu, Y ; Chen, D |
| Link: | |
| Zeitschrift: | Nature communications, Jg. 14 (2023-12-09), Heft 1, S. 8174 |
| Veröffentlichung: | [London] : Nature Pub. Group, 2023 |
| Medientyp: | academicJournal |
| ISSN: | 2041-1723 (electronic) |
| DOI: | 10.1038/s41467-023-44091-4 |
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