Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering.
In: IEEE Transactions on Electron Devices, Jg. 66 (2019-05-01), Heft 5, S. 2219-2223
Online
academicJournal
Zugriff:
Titel: |
Impact of Sputtering Power on Amorphous In–Al–Zn–O Films and Thin Film Transistors Prepared by RF Magnetron Sputtering.
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Autor/in / Beteiligte Person: | Xu, Weidong ; Xu, Meng ; Jiang, Jianfeng ; Xu, Sanjin ; Feng, Xianjin |
Link: | |
Zeitschrift: | IEEE Transactions on Electron Devices, Jg. 66 (2019-05-01), Heft 5, S. 2219-2223 |
Veröffentlichung: | 2019 |
Medientyp: | academicJournal |
ISSN: | 0018-9383 (print) |
DOI: | 10.1109/TED.2019.2906892 |
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