Use of tertiarybutylarsine for GaAs growth.
In: Applied Physics Letters, Jg. 50 (1987-01-26), Heft 4, S. 218-220
Online
academicJournal
Zugriff:
The use of AsH3 in the organometallic vapor phase epitaxial (OMVPE) growth of GaAs and other As containing III/V semiconductors has a number of disadvantages, including toxicity hazard, purity problems associated with storage cylinders, and low pyrolysis rate at the low temperatures often desirable in OMVPE growth. A new organometallic source, tertiarybutylarsine (TBAs), has recently become available. In this letter we report the results of OMVPE growth of GaAs using trimethylgallium (TMGa) and TBAs in a one atmosphere ambient. The major results of the study are (1) the vapor pressure of TBAs is measured to be 96 Torr at 10 °C, (2) the pyrolysis rate of TBAs appears to be greater than that of AsH3 under similar conditions, (3) as a consequence of (2), excellent morphology GaAs layers can be grown at lower values of V/III ratio (approximately unity) using TBAs than using AsH3 (4) no additional carbon incorporation is produced by the use of the organometallic group V source. These factors make TBAs a promising candidate to replace AsH3 in vapor phase epitaxial growth of GaAs. [ABSTRACT FROM AUTHOR]
| Titel: |
Use of tertiarybutylarsine for GaAs growth.
|
|---|---|
| Autor/in / Beteiligte Person: | Chen, C. H. ; Larsen, C. A. ; Stringfellow, G. B. |
| Link: | |
| Zeitschrift: | Applied Physics Letters, Jg. 50 (1987-01-26), Heft 4, S. 218-220 |
| Veröffentlichung: | 1987 |
| Medientyp: | academicJournal |
| ISSN: | 0003-6951 (print) |
| DOI: | 10.1063/1.97666 |
| Schlagwort: |
|
| Sonstiges: |
|